Attribute
Description
Manufacturer Part Number
2N7002K
Manufacturer
Description
MOSFET N-CH 60V 300MA SOT23
Note :
GST will not be applied to orders shipping outside of India
Stock: 30
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 30 | ₹ 5.20 | ₹ 156.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 300mA (Ta) | |
| Max On-State Resistance | 2 Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 50pF @ 25V | |
| Maximum Power Handling | 350mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 300mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 50pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 350mW for device protection. Peak Rds(on) at Id and Vgs 2 Ohm @ 500mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.
