Stock: 10
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 87.47 | ₹ 874.70 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 7.5A | |
| Max On-State Resistance | 18 mOhm @ 7.5A, 4.5V | |
| Max Threshold Gate Voltage | 1.5V @ 250µA | |
| Gate Charge at Vgs | 32nC @ 4.5V | |
| Input Cap at Vds | 2130pF @ 10V | |
| Maximum Power Handling | 900mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 7.5A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as 2 N-Channel (Dual). Upholds 32nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2130pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 900mW for device protection. Peak Rds(on) at Id 32nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 18 mOhm @ 7.5A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold level.
