Attribute
Description
Manufacturer Part Number
2N7635-GA
Manufacturer
Description
TRANS SJT 650V 4A TO-257
Manufacturer Lead Time
10 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | Silicon Carbide, Normally Off | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 4A (Tc) (165°C) | |
| Max On-State Resistance | 415 mOhm @ 4A | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 324pF @ 35V | |
| Maximum Power Handling | 7W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-257-3 |
Description
Measures resistance at forward current Silicon Carbide, Normally Off for LED or diode evaluation. Supports a continuous drain current (Id) of 4A (Tc) (165°C) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as Silicon Carbide, Normally Off. The input capacitance is rated at 324pF @ 35V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-257-3 providing mechanical and thermal shielding. Peak power 7W for device protection. Peak Rds(on) at Id and Vgs 415 mOhm @ 4A for MOSFET criteria.
