GA16JT17-247

GA16JT17-247
Attribute
Description
Manufacturer Part Number
GA16JT17-247
Description
TRANS SJT 1700V 16A TO-247AB
Manufacturer Lead Time
10 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type Silicon Carbide, Normally Off
Drain-Source Breakdown Volts 1700V (1.7kV)
Continuous Drain Current at 25C 16A (Tc) (90°C)
Max On-State Resistance 110 mOhm @ 16A
Max Threshold Gate Voltage -
Gate Charge at Vgs -
Input Cap at Vds -
Maximum Power Handling 32W
Attachment Mounting Style Through Hole
Component Housing Style TO-247-3

Description

Measures resistance at forward current Silicon Carbide, Normally Off for LED or diode evaluation. Supports a continuous drain current (Id) of 16A (Tc) (90°C) at 25°C. Supports Vdss drain-to-source voltage rated at 1700V (1.7kV). Accommodates FET classification identified as Silicon Carbide, Normally Off. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 32W for device protection. Peak Rds(on) at Id and Vgs 110 mOhm @ 16A for MOSFET criteria.

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