GA20JT12-263

GA20JT12-263
Attribute
Description
Manufacturer Part Number
GA20JT12-263
Description
TRANS SJT 1200V 45A D2PAK
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Stock:
13

Distributor: 118

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 2,169.38 ₹ 2,169.38

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Obsolete
Field Effect Transistor Type -
Core Technology Platform SiC (Silicon Carbide Junction Transistor)
Drain-Source Breakdown Volts 1200 V
Continuous Drain Current at 25C 45A (Tc)
Gate Drive Voltage Range -
Max On-State Resistance 60mOhm @ 20A
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Maximum Gate Voltage -
Max Input Cap at Vds 3091 pF @ 800 V
Transistor Special Function -
Max Heat Dissipation 282W (Tc)
Ambient Temp Range 175°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type TO-263-7
Component Housing Style TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Description

Supports a continuous drain current (Id) of 45A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 1200 V. The highest input capacitance is 3091 pF @ 800 V at Vds for safeguarding the device. The input capacitance is rated at 3091 pF @ 800 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 175°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA providing mechanical and thermal shielding. Enclosure type TO-263-7 ensuring device integrity. Highest power dissipation 282W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id and Vgs 60mOhm @ 20A for MOSFET criteria. Manufacturer package type TO-263-7 for component choice. Platform technology SiC (Silicon Carbide Junction Transistor) for the type of product.

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