BSS205N H6327

BSS205N H6327
Attribute
Description
Manufacturer Part Number
BSS205N H6327
Description
MOSFET N-CH 20V 2.5A SOT23
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Stock:
5600

Distributor: 58

Lead Time: Not specified

Quantity Unit Price Ext. Price
2500 ₹ 4.20 ₹ 10,500.00
1900 ₹ 4.59 ₹ 8,721.00
1400 ₹ 4.99 ₹ 6,986.00
700 ₹ 5.40 ₹ 3,780.00

Stock:
24562

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 38.27 ₹ 38.27
10 ₹ 28.12 ₹ 281.20
100 ₹ 15.93 ₹ 1,593.00
500 ₹ 10.77 ₹ 5,385.00
1000 ₹ 8.19 ₹ 8,190.00
3000 ₹ 7.21 ₹ 21,630.00
6000 ₹ 6.23 ₹ 37,380.00
9000 ₹ 5.79 ₹ 52,110.00
24000 ₹ 5.16 ₹ 1,23,840.00

Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 2.5A (Ta)
Max On-State Resistance 50 mOhm @ 2.5A, 4.5V
Max Threshold Gate Voltage 1.2V @ 11µA
Gate Charge at Vgs 3.2nC @ 4.5V
Input Cap at Vds 419pF @ 10V
Maximum Power Handling 500mW
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 2.5A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 3.2nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 419pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 500mW for device protection. Peak Rds(on) at Id 3.2nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 50 mOhm @ 2.5A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1.2V @ 11µA for MOSFET threshold level.

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