Stock: 10300
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 150000 | ₹ 5.04 | ₹ 7,56,000.00 |
| 75000 | ₹ 5.19 | ₹ 3,89,250.00 |
| 30000 | ₹ 5.34 | ₹ 1,60,200.00 |
| 15000 | ₹ 5.64 | ₹ 84,600.00 |
| 3000 | ₹ 5.76 | ₹ 17,280.00 |
Stock: 57000
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3325 | ₹ 9.28 | ₹ 30,856.00 |
| 2485 | ₹ 10.35 | ₹ 25,719.75 |
| 1920 | ₹ 10.72 | ₹ 20,582.40 |
| 1395 | ₹ 11.07 | ₹ 15,442.65 |
| 905 | ₹ 11.43 | ₹ 10,344.15 |
| 370 | ₹ 13.92 | ₹ 5,150.40 |
Stock: 1
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 39.16 | ₹ 39.16 |
| 10 | ₹ 28.84 | ₹ 288.40 |
| 100 | ₹ 16.29 | ₹ 1,629.00 |
| 500 | ₹ 11.04 | ₹ 5,520.00 |
| 1000 | ₹ 8.37 | ₹ 8,370.00 |
| 3000 | ₹ 7.30 | ₹ 21,900.00 |
| 6000 | ₹ 6.32 | ₹ 37,920.00 |
| 9000 | ₹ 5.87 | ₹ 52,830.00 |
| 24000 | ₹ 5.25 | ₹ 1,26,000.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 1.5A (Ta) | |
| Max On-State Resistance | 140 mOhm @ 1.5A, 10V | |
| Max Threshold Gate Voltage | 2V @ 6.3µA | |
| Gate Charge at Vgs | 2.9nC @ 10V | |
| Input Cap at Vds | 294pF @ 15V | |
| Maximum Power Handling | 500mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 1.5A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 2.9nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 294pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 500mW for device protection. Peak Rds(on) at Id 2.9nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 140 mOhm @ 1.5A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 6.3µA for MOSFET threshold level.
