IPF13N03LA G

IPF13N03LA G
Attribute
Description
Manufacturer Part Number
IPF13N03LA G
Description
MOSFET N-CH 25V 30A TO252-3
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Stock:
366

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
12500 ₹ 31.54 ₹ 3,94,250.00
7500 ₹ 32.08 ₹ 2,40,600.00
5000 ₹ 33.41 ₹ 1,67,050.00
2500 ₹ 36.02 ₹ 90,050.00
100 ₹ 31.54 ₹ 3,154.00
10 ₹ 36.40 ₹ 364.00
1 ₹ 42.72 ₹ 42.72

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line OptiMOS™
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)
Availability Status Obsolete
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 25 V
Continuous Drain Current at 25C 30A (Tc)
Gate Drive Voltage Range 4.5V, 10V
Max On-State Resistance 12.8mOhm @ 30A, 10V
Max Threshold Gate Voltage 2V @ 20µA
Max Gate Charge at Vgs 8.3 nC @ 5 V
Maximum Gate Voltage ±20V
Max Input Cap at Vds 1043 pF @ 15 V
Transistor Special Function -
Max Heat Dissipation 46W (Tc)
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type PG-TO252-3-23
Component Housing Style TO-252-3, DPAK (2 Leads + Tab), SC-63

Description

Supports a continuous drain current (Id) of 30A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 25 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 8.3 nC @ 5 V gate charge at Vgs for enhanced switching efficiency. Upholds 8.3 nC @ 5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1043 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 1043 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT) for component protection or transport. Enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Enclosure type PG-TO252-3-23 ensuring device integrity. Highest power dissipation 46W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 8.3 nC @ 5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 12.8mOhm @ 30A, 10V for MOSFET criteria. Product or component classification series OptiMOS™. Manufacturer package type PG-TO252-3-23 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2V @ 20µA for MOSFET threshold level.

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