Stock: 479
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 230.51 | ₹ 230.51 |
| 10 | ₹ 176.22 | ₹ 1,762.20 |
| 100 | ₹ 140.62 | ₹ 14,062.00 |
| 500 | ₹ 117.48 | ₹ 58,740.00 |
| 1000 | ₹ 100.57 | ₹ 1,00,570.00 |
| 2500 | ₹ 95.23 | ₹ 2,38,075.00 |
| 5000 | ₹ 92.56 | ₹ 4,62,800.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 11A (Tc) | |
| Max On-State Resistance | 299 mOhm @ 6.6A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 440µA | |
| Gate Charge at Vgs | 29nC @ 10V | |
| Input Cap at Vds | 1100pF @ 100V | |
| Maximum Power Handling | 96W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 11A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 29nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1100pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 96W for device protection. Peak Rds(on) at Id 29nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 299 mOhm @ 6.6A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 440µA for MOSFET threshold level.
