Stock: 658
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 158.42 | ₹ 158.42 |
| 10 | ₹ 100.57 | ₹ 1,005.70 |
| 100 | ₹ 66.84 | ₹ 6,684.00 |
| 500 | ₹ 54.73 | ₹ 27,365.00 |
| 1000 | ₹ 41.21 | ₹ 41,210.00 |
| 2000 | ₹ 40.58 | ₹ 81,160.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 18.7A (Ta) | |
| Max On-State Resistance | 130 mOhm @ 13.2A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 28nC @ 10V | |
| Input Cap at Vds | 860pF @ 25V | |
| Maximum Power Handling | 81.1W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 18.7A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 28nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 860pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 81.1W for device protection. Peak Rds(on) at Id 28nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 130 mOhm @ 13.2A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
