IRFHS9301TRPBF
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 6A (Ta), 13A (Tc) | |
| Max On-State Resistance | 37 mOhm @ 7.8A, 10V | |
| Max Threshold Gate Voltage | 2.4V @ 25µA | |
| Gate Charge at Vgs | 13nC @ 10V | |
| Input Cap at Vds | 580pF @ 25V | |
| Maximum Power Handling | 2.1W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-VQFN |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 6A (Ta), 13A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 13nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 580pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 6-VQFN providing mechanical and thermal shielding. Peak power 2.1W for device protection. Peak Rds(on) at Id 13nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 37 mOhm @ 7.8A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.4V @ 25µA for MOSFET threshold level.
