IXTC36P15P
Data Sheet
Attribute
Description
Manufacturer Part Number
IXTC36P15P
Manufacturer
Description
MOSFET P-CH 150V 22A ISOPLUS220
Manufacturer Lead Time
38 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 150V | |
| Continuous Drain Current at 25C | 22A (Tc) | |
| Max On-State Resistance | 120 mOhm @ 18A, 10V | |
| Max Threshold Gate Voltage | 5V @ 250µA | |
| Gate Charge at Vgs | 55nC @ 10V | |
| Input Cap at Vds | 2950pF @ 25V | |
| Maximum Power Handling | 150W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | - |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 22A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 150V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 55nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2950pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Peak power 150W for device protection. Peak Rds(on) at Id 55nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 120 mOhm @ 18A, 10V for MOSFET criteria. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.
