IXTP36N20T

IXTP36N20T

Data Sheet

Attribute
Description
Manufacturer Part Number
IXTP36N20T
Manufacturer
Description
MOSFET N-CH 200V 36A TO-220
Manufacturer Lead Time
38 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 200V
Continuous Drain Current at 25C 36A (Tc)
Max On-State Resistance -
Max Threshold Gate Voltage -
Gate Charge at Vgs -
Input Cap at Vds -
Maximum Power Handling -
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 36A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 200V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding.

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