SI2301-TP

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 2.8A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 2.5V, 4.5V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 14.5 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 14.5 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 880 pF @ 6 V at Vds for safeguarding the device. The input capacitance is rated at 880 pF @ 6 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23 ensuring device integrity. Highest power dissipation 1.25W (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 14.5 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 120mOhm @ 2.8A, 4.5V for MOSFET criteria. Manufacturer package type SOT-23 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.