Stock: 9885
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5953 | ₹ 0.37 | ₹ 2,202.61 |
| 1430 | ₹ 0.75 | ₹ 1,072.50 |
| 1 | ₹ 1.99 | ₹ 1.99 |
Stock: 39000
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 7160 | ₹ 3.73 | ₹ 26,706.80 |
| 5355 | ₹ 4.16 | ₹ 22,276.80 |
| 4145 | ₹ 4.30 | ₹ 17,823.50 |
| 3010 | ₹ 4.44 | ₹ 13,364.40 |
| 1945 | ₹ 4.58 | ₹ 8,908.10 |
| 800 | ₹ 5.58 | ₹ 4,464.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 200mA (Ta) | |
| Max On-State Resistance | 4.5 Ohm @ 100mA, 10V | |
| Max Threshold Gate Voltage | 1.5V @ 250A | |
| Gate Charge at Vgs | 0.51nC @ 4.5V | |
| Input Cap at Vds | 47pF @ 30V | |
| Maximum Power Handling | 300mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 200mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 0.51nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 47pF @ 30V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 300mW for device protection. Peak Rds(on) at Id 0.51nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.5 Ohm @ 100mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 1.5V @ 250A for MOSFET threshold level.
