Stock: 7
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 12.46 | ₹ 12.46 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 170mA (Ta) | |
| Max On-State Resistance | 4.5 Ohm @ 100mA, 10V | |
| Max Threshold Gate Voltage | 2.1V @ 250µA | |
| Gate Charge at Vgs | 0.43nC @ 4.5V | |
| Input Cap at Vds | 17pF @ 10V | |
| Maximum Power Handling | 220mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 170mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 0.43nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 17pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 220mW for device protection. Peak Rds(on) at Id 0.43nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.5 Ohm @ 100mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.1V @ 250µA for MOSFET threshold level.
