Stock: 15846
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 33.16 | ₹ 33,16,000.00 |
| 10000 | ₹ 39.58 | ₹ 3,95,800.00 |
| 1000 | ₹ 44.39 | ₹ 44,390.00 |
| 500 | ₹ 48.14 | ₹ 24,070.00 |
| 100 | ₹ 53.49 | ₹ 5,349.00 |
Stock: 15846
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 36.96 | ₹ 36,96,000.00 |
| 10000 | ₹ 44.12 | ₹ 4,41,200.00 |
| 1000 | ₹ 49.48 | ₹ 49,480.00 |
| 500 | ₹ 53.65 | ₹ 26,825.00 |
| 100 | ₹ 59.61 | ₹ 5,961.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N and P-Channel | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 3.5A, 2.3A | |
| Max On-State Resistance | 100 mOhm @ 2.2A, 10V | |
| Max Threshold Gate Voltage | 2.8V @ 1mA | |
| Gate Charge at Vgs | 30nC @ 10V | |
| Input Cap at Vds | 250pF @ 20V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Supports a continuous drain current (Id) of 3.5A, 2.3A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as N and P-Channel. Upholds 30nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 250pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Peak power 2W for device protection. Peak Rds(on) at Id 30nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 100 mOhm @ 2.2A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.8V @ 1mA for MOSFET threshold level.
