Stock: 65963
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 29.85 | ₹ 29,85,000.00 |
| 10000 | ₹ 35.63 | ₹ 3,56,300.00 |
| 1000 | ₹ 39.96 | ₹ 39,960.00 |
| 500 | ₹ 43.33 | ₹ 21,665.00 |
| 100 | ₹ 48.15 | ₹ 4,815.00 |
Stock: 65963
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 37.32 | ₹ 37,32,000.00 |
| 10000 | ₹ 44.54 | ₹ 4,45,400.00 |
| 1000 | ₹ 49.96 | ₹ 49,960.00 |
| 617 | ₹ 54.17 | ₹ 33,422.89 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 7.9A (Ta) | |
| Max On-State Resistance | 18 mOhm @ 7.9A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Gate Charge at Vgs | 13nC @ 4.5V | |
| Input Cap at Vds | 886pF @ 10V | |
| Maximum Power Handling | 1.7W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-UDFN Exposed Pad |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 7.9A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 13nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 886pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 6-UDFN Exposed Pad providing mechanical and thermal shielding. Peak power 1.7W for device protection. Peak Rds(on) at Id 13nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 18 mOhm @ 7.9A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
