Stock: 280
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 14.61 | ₹ 14,61,000.00 |
| 10000 | ₹ 17.44 | ₹ 1,74,400.00 |
| 1000 | ₹ 19.56 | ₹ 19,560.00 |
| 500 | ₹ 21.21 | ₹ 10,605.00 |
| 100 | ₹ 23.57 | ₹ 2,357.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 12V | |
| Continuous Drain Current at 25C | 8.2A (Ta) | |
| Max On-State Resistance | 19 mOhm @ 8.2A, 4.5V | |
| Max Threshold Gate Voltage | 900mV @ 250µA | |
| Gate Charge at Vgs | 100nC @ 4.5V | |
| Input Cap at Vds | 2875pF @ 6V | |
| Maximum Power Handling | 1.7W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-UDFN Exposed Pad |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 8.2A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 12V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 100nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2875pF @ 6V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 6-UDFN Exposed Pad providing mechanical and thermal shielding. Peak power 1.7W for device protection. Peak Rds(on) at Id 100nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 19 mOhm @ 8.2A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 900mV @ 250µA for MOSFET threshold level.