Stock: 31498
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 11.28 | ₹ 11,28,000.00 |
| 10000 | ₹ 13.47 | ₹ 1,34,700.00 |
| 1000 | ₹ 15.10 | ₹ 15,100.00 |
| 500 | ₹ 16.38 | ₹ 8,190.00 |
| 100 | ₹ 18.19 | ₹ 1,819.00 |
Stock: 31498
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 12.58 | ₹ 12,58,000.00 |
| 10000 | ₹ 15.01 | ₹ 1,50,100.00 |
| 1000 | ₹ 16.84 | ₹ 16,840.00 |
| 500 | ₹ 18.25 | ₹ 9,125.00 |
| 100 | ₹ 20.28 | ₹ 2,028.00 |
Stock: 31498
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 15.72 | ₹ 15,72,000.00 |
| 10000 | ₹ 18.76 | ₹ 1,87,600.00 |
| 1586 | ₹ 21.05 | ₹ 33,385.30 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 5.5A (Ta) | |
| Max On-State Resistance | 37 mOhm @ 5.5A, 4.5V | |
| Max Threshold Gate Voltage | 900mV @ 250µA | |
| Gate Charge at Vgs | 23nC @ 4.5V | |
| Input Cap at Vds | 1575pF @ 10V | |
| Maximum Power Handling | 1.7W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-UDFN Exposed Pad |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 5.5A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 23nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1575pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 6-UDFN Exposed Pad providing mechanical and thermal shielding. Peak power 1.7W for device protection. Peak Rds(on) at Id 23nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 37 mOhm @ 5.5A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 900mV @ 250µA for MOSFET threshold level.