Stock: 5000
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5000 | ₹ 75.20 | ₹ 3,76,000.00 |
| 2500 | ₹ 75.95 | ₹ 1,89,875.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 47A | |
| Max On-State Resistance | 25 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 61nC @ 10V | |
| Input Cap at Vds | 2600pF @ 25V | |
| Maximum Power Handling | 150W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 47A at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 61nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2600pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-252-3, DPak (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Peak power 150W for device protection. Peak Rds(on) at Id 61nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 25 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
