Stock: 25
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 206.48 | ₹ 20,64,800.00 |
| 1000 | ₹ 219.83 | ₹ 2,19,830.00 |
| 500 | ₹ 232.29 | ₹ 1,16,145.00 |
| 100 | ₹ 245.64 | ₹ 24,564.00 |
| 25 | ₹ 258.10 | ₹ 6,452.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 130A (Tmb) | |
| Max On-State Resistance | 3.4 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 2.1V @ 1mA | |
| Gate Charge at Vgs | 95nC @ 5V | |
| Input Cap at Vds | 10115pF @ 25V | |
| Maximum Power Handling | 293W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 130A (Tmb) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 95nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 10115pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 293W for device protection. Peak Rds(on) at Id 95nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.4 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.1V @ 1mA for MOSFET threshold level.
