Stock: 33
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 188.68 | ₹ 18,86,800.00 |
| 1000 | ₹ 200.25 | ₹ 2,00,250.00 |
| 500 | ₹ 212.71 | ₹ 1,06,355.00 |
| 100 | ₹ 224.28 | ₹ 22,428.00 |
| 25 | ₹ 235.85 | ₹ 5,896.25 |
Stock: 33
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 210.04 | ₹ 21,00,400.00 |
| 1000 | ₹ 223.39 | ₹ 2,23,390.00 |
| 500 | ₹ 236.74 | ₹ 1,18,370.00 |
| 100 | ₹ 249.20 | ₹ 24,920.00 |
| 25 | ₹ 262.55 | ₹ 6,563.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 80V | |
| Continuous Drain Current at 25C | 100A (Tc) | |
| Max On-State Resistance | 4.7 mOhm @ 15A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 101nC @ 10V | |
| Input Cap at Vds | 6793pF @ 12V | |
| Maximum Power Handling | 270W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 80V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 101nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 6793pF @ 12V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 270W for device protection. Peak Rds(on) at Id 101nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.7 mOhm @ 15A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
