Attribute
Description
Manufacturer Part Number
PSMN7R0-100BS,118
Manufacturer
Description
MOSFET N-CH 100V 100A D2PAK
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 100A (Tmb) | |
| Max On-State Resistance | 6.8 mOhm @ 15A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 125nC @ 10V | |
| Input Cap at Vds | 6686pF @ 50V | |
| Maximum Power Handling | 269W | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100A (Tmb) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 125nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 6686pF @ 50V at Vds for optimal performance. Peak power 269W for device protection. Peak Rds(on) at Id 125nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 6.8 mOhm @ 15A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
