Stock: 975
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 77.80 | ₹ 77,80,000.00 |
| 10000 | ₹ 92.56 | ₹ 9,25,600.00 |
| 1000 | ₹ 104.13 | ₹ 1,04,130.00 |
| 500 | ₹ 113.03 | ₹ 56,515.00 |
| 100 | ₹ 125.49 | ₹ 12,549.00 |
Stock: 523
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 97.26 | ₹ 97,26,000.00 |
| 10000 | ₹ 115.70 | ₹ 11,57,000.00 |
| 1000 | ₹ 130.16 | ₹ 1,30,160.00 |
| 500 | ₹ 141.29 | ₹ 70,645.00 |
| 213 | ₹ 156.86 | ₹ 33,411.18 |
Stock: 975
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 170 | ₹ 156.64 | ₹ 26,628.80 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 100A (Tj) | |
| Max On-State Resistance | 8.5 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 111nC @ 10V | |
| Input Cap at Vds | 5512pF @ 50V | |
| Maximum Power Handling | 263W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-262-3 Long Leads, I²Pak, TO-262AA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100A (Tj) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 111nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 5512pF @ 50V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-262-3 Long Leads, I²Pak, TO-262AA providing mechanical and thermal shielding. Peak power 263W for device protection. Peak Rds(on) at Id 111nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 8.5 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
