Attribute
Description
Manufacturer Part Number
2SJ053600L
Manufacturer
Description
MOSFET P-CH 30V .1A S-MINI-3P
Manufacturer Lead Time
27 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 100mA (Ta) | |
| Max On-State Resistance | 75 Ohm @ 10mA, 5V | |
| Max Threshold Gate Voltage | 2V @ 1µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 150mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 150mW for device protection. Peak Rds(on) at Id and Vgs 75 Ohm @ 10mA, 5V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 1µA for MOSFET threshold level.
