Attribute
Description
Manufacturer Part Number
MTM982400BBF
Manufacturer
Description
MOSFET N-CH 40V 7A SO8-F1
Manufacturer Lead Time
27 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 7A (Ta) | |
| Max On-State Resistance | 23 mOhm @ 7A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 1750pF @ 10V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SO8-F1 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 7A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 1750pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SO8-F1 providing mechanical and thermal shielding. Peak power 2W for device protection. Peak Rds(on) at Id and Vgs 23 mOhm @ 7A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold level.
