Attribute
Description
Manufacturer Part Number
UP0187B00L
Manufacturer
Description
MOSFET N-CH 30V 100MA SSMINI-5
Manufacturer Lead Time
27 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 100mA | |
| Max On-State Resistance | 8 Ohm @ 10mA, 4V | |
| Max Threshold Gate Voltage | 1.5V @ 1µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 12pF @ 3V | |
| Maximum Power Handling | 125mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-665 |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 100mA at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as 2 N-Channel (Dual). The input capacitance is rated at 12pF @ 3V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-665 providing mechanical and thermal shielding. Peak power 125mW for device protection. Peak Rds(on) at Id and Vgs 8 Ohm @ 10mA, 4V for MOSFET criteria. Peak Vgs(th) at Id 1.5V @ 1µA for MOSFET threshold level.
