Attribute
Description
Manufacturer Part Number
UP0497900L
Manufacturer
Description
MOSFET N+P 50,
30V .1A SSMINI-6P
Manufacturer Lead Time
27 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N and P-Channel | |
| Drain-Source Breakdown Volts | 50V, 30V | |
| Continuous Drain Current at 25C | 100mA | |
| Max On-State Resistance | 12 Ohm @ 10mA, 4V | |
| Max Threshold Gate Voltage | 1.5V @ 1µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 125mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-563, SOT-666 |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Supports a continuous drain current (Id) of 100mA at 25°C. Supports Vdss drain-to-source voltage rated at 50V, 30V. Accommodates FET classification identified as N and P-Channel. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-563, SOT-666 providing mechanical and thermal shielding. Peak power 125mW for device protection. Peak Rds(on) at Id and Vgs 12 Ohm @ 10mA, 4V for MOSFET criteria. Peak Vgs(th) at Id 1.5V @ 1µA for MOSFET threshold level.
