RJK03C1DPB-00#J5
Data Sheet
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Schottky, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 60A (Ta) | |
| Max On-State Resistance | 2.2 mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 42nC @ 4.5V | |
| Input Cap at Vds | 6000pF @ 10V | |
| Maximum Power Handling | 65W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-100, SOT-669 |
Description
Measures resistance at forward current MOSFET N-Channel, Schottky, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 60A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Schottky, Metal Oxide. Upholds 42nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 6000pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SC-100, SOT-669 providing mechanical and thermal shielding. Peak power 65W for device protection. Peak Rds(on) at Id 42nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.2 mOhm @ 30A, 10V for MOSFET criteria.
