RJK03M4DPA-00#J5A
Data Sheet
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 35A | |
| Max On-State Resistance | 4.6 mOhm @ 17.5A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 12nC @ 4.5V | |
| Input Cap at Vds | 2170pF @ 10V | |
| Maximum Power Handling | 30W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-WFDFN Exposed Pad |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 35A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 12nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2170pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-WFDFN Exposed Pad providing mechanical and thermal shielding. Peak power 30W for device protection. Peak Rds(on) at Id 12nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.6 mOhm @ 17.5A, 10V for MOSFET criteria.
