RJK4002DJE-00#Z0
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 400V | |
| Continuous Drain Current at 25C | 3A | |
| Max On-State Resistance | 2.9 Ohm @ 1.5A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 6nC @ 100V | |
| Input Cap at Vds | 165pF @ 25V | |
| Maximum Power Handling | 2.54W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 Long Body |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 3A at 25°C. Supports Vdss drain-to-source voltage rated at 400V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 6nC @ 100V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 165pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 Long Body providing mechanical and thermal shielding. Peak power 2.54W for device protection. Peak Rds(on) at Id 6nC @ 100V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.9 Ohm @ 1.5A, 10V for MOSFET criteria.
