Stock: 30739
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 48.83 | ₹ 48,83,000.00 |
| 10000 | ₹ 58.29 | ₹ 5,82,900.00 |
| 1000 | ₹ 65.38 | ₹ 65,380.00 |
| 500 | ₹ 70.89 | ₹ 35,445.00 |
| 100 | ₹ 78.77 | ₹ 7,877.00 |
Stock: 30739
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 48.83 | ₹ 48,83,000.00 |
| 10000 | ₹ 58.29 | ₹ 5,82,900.00 |
| 1000 | ₹ 65.38 | ₹ 65,380.00 |
| 500 | ₹ 70.89 | ₹ 35,445.00 |
| 100 | ₹ 78.77 | ₹ 7,877.00 |
Stock: 30739
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 61.05 | ₹ 61,05,000.00 |
| 10000 | ₹ 72.86 | ₹ 7,28,600.00 |
| 1000 | ₹ 81.73 | ₹ 81,730.00 |
| 500 | ₹ 88.61 | ₹ 44,305.00 |
| 339 | ₹ 98.46 | ₹ 33,377.94 |
Stock: 30739
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 271 | ₹ 95.55 | ₹ 25,894.05 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 18A (Ta) | |
| Gate Drive Voltage Range | - | |
| Max On-State Resistance | 55mOhm @ 9A, 10V | |
| Max Threshold Gate Voltage | - | |
| Max Gate Charge at Vgs | 19 nC @ 10 V | |
| Maximum Gate Voltage | - | |
| Max Input Cap at Vds | 775 pF @ 20 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2W (Ta), 20W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220ML | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 18A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates FET classification identified as N-Channel. Guarantees maximum 19 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 19 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 775 pF @ 20 V at Vds for safeguarding the device. The input capacitance is rated at 775 pF @ 20 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type TO-220ML ensuring device integrity. Highest power dissipation 2W (Ta), 20W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 19 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 55mOhm @ 9A, 10V for MOSFET criteria. Manufacturer package type TO-220ML for component choice. Platform technology MOSFET (Metal Oxide) for the type of product.
