Stock: 56400
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 13.76 | ₹ 13,76,000.00 |
| 10000 | ₹ 16.43 | ₹ 1,64,300.00 |
| 1000 | ₹ 18.42 | ₹ 18,420.00 |
| 500 | ₹ 19.98 | ₹ 9,990.00 |
| 100 | ₹ 22.20 | ₹ 2,220.00 |
Stock: 56400
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 13.76 | ₹ 13,76,000.00 |
| 10000 | ₹ 16.43 | ₹ 1,64,300.00 |
| 1000 | ₹ 18.42 | ₹ 18,420.00 |
| 500 | ₹ 19.98 | ₹ 9,990.00 |
| 100 | ₹ 22.20 | ₹ 2,220.00 |
Stock: 56400
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 17.20 | ₹ 17,20,000.00 |
| 10000 | ₹ 20.54 | ₹ 2,05,400.00 |
| 1450 | ₹ 23.03 | ₹ 33,393.50 |
Stock: 925
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 925 | ₹ 27.65 | ₹ 25,576.25 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 50 V | |
| Continuous Drain Current at 25C | 100mA (Ta) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 20Ohm @ 10mA, 10V | |
| Max Threshold Gate Voltage | - | |
| Max Gate Charge at Vgs | - | |
| Maximum Gate Voltage | ±12V | |
| Max Input Cap at Vds | 15 pF @ 10 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 200mW (Ta) | |
| Ambient Temp Range | 125°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 3-CP | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Supports a continuous drain current (Id) of 100mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 50 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. The highest input capacitance is 15 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 15 pF @ 10 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 125°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type 3-CP ensuring device integrity. Highest power dissipation 200mW (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 20Ohm @ 10mA, 10V for MOSFET criteria. Manufacturer package type 3-CP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±12V for MOSFET parameters.
