2SK669-AC
Data Sheet
Attribute
Description
Manufacturer Part Number
2SK669-AC
Manufacturer
Description
MOSFET N-CH 50V 100MA 3SPA
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 50V | |
| Continuous Drain Current at 25C | 100mA (Ta) | |
| Max On-State Resistance | 20 Ohm @ 10mA, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 15pF @ 10V | |
| Maximum Power Handling | 200mW | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 3-SIP |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 50V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 15pF @ 10V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case 3-SIP providing mechanical and thermal shielding. Peak power 200mW for device protection. Peak Rds(on) at Id and Vgs 20 Ohm @ 10mA, 10V for MOSFET criteria.
