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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | STripFET™ II | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 30 V | |
| Continuous Drain Current at 25C | 85A (Tc) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 8mOhm @ 40A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 40 nC @ 4.5 V | |
| Maximum Gate Voltage | ±16V | |
| Max Input Cap at Vds | 2210 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 110W (Tc) | |
| Ambient Temp Range | -65°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | D2PAK | |
| Component Housing Style | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Description
Supports a continuous drain current (Id) of 85A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 40 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 40 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2210 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 2210 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -65°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Enclosure type D2PAK ensuring device integrity. Highest power dissipation 110W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 40 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 8mOhm @ 40A, 10V for MOSFET criteria. Product or component classification series STripFET™ II. Manufacturer package type D2PAK for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±16V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
