Stock: 1250
Distributor: 127
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1250 | ₹ 63.63 | ₹ 79,537.50 |
| 250 | ₹ 67.20 | ₹ 16,800.00 |
| 75 | ₹ 68.98 | ₹ 5,173.50 |
| 15 | ₹ 71.65 | ₹ 1,074.75 |
| 1 | ₹ 76.54 | ₹ 76.54 |
Stock: 2500
Distributor: 113
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2500 | ₹ 107.16 | ₹ 2,67,900.00 |
| 15 | ₹ 100.30 | ₹ 1,504.50 |
| 75 | ₹ 96.56 | ₹ 7,242.00 |
| 250 | ₹ 94.07 | ₹ 23,517.50 |
| 1250 | ₹ 89.09 | ₹ 1,11,362.50 |
Stock: 95
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 64 | ₹ 329.30 | ₹ 21,075.20 |
| 18 | ₹ 356.00 | ₹ 6,408.00 |
| 1 | ₹ 534.00 | ₹ 534.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | DeepGATE™, STripFET™ VI | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 80A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 6.5mOhm @ 40A, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 250µA | |
| Max Gate Charge at Vgs | 122 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 7480 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 120W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | Automotive | |
| Certification Qualification | AEC-Q101 | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | DPAK | |
| Component Housing Style | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 80A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 122 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 122 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 7480 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 7480 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Enclosure type DPAK ensuring device integrity. Highest power dissipation 120W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 122 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 6.5mOhm @ 40A, 10V for MOSFET criteria. Product or component classification series DeepGATE™, STripFET™ VI. Manufacturer package type DPAK for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4.5V @ 250µA for MOSFET threshold level.
