Stock: 500
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 328 | ₹ 122.61 | ₹ 40,216.08 |
| 161 | ₹ 129.58 | ₹ 20,862.38 |
| 76 | ₹ 139.56 | ₹ 10,606.56 |
| 24 | ₹ 149.52 | ₹ 3,588.48 |
| 9 | ₹ 194.38 | ₹ 1,749.42 |
| 2 | ₹ 299.04 | ₹ 598.08 |
Stock: 400
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 239 | ₹ 173.55 | ₹ 41,478.45 |
| 90 | ₹ 186.90 | ₹ 16,821.00 |
| 1 | ₹ 400.50 | ₹ 400.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | SuperMESH3™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 525 V | |
| Continuous Drain Current at 25C | 10A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 510mOhm @ 5A, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 50µA | |
| Max Gate Charge at Vgs | 51 nC @ 10 V | |
| Maximum Gate Voltage | ±30V | |
| Max Input Cap at Vds | 1400 pF @ 50 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 30W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220FP | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 10A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 525 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 51 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 51 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1400 pF @ 50 V at Vds for safeguarding the device. The input capacitance is rated at 1400 pF @ 50 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type TO-220FP ensuring device integrity. Highest power dissipation 30W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 51 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 510mOhm @ 5A, 10V for MOSFET criteria. Product or component classification series SuperMESH3™. Manufacturer package type TO-220FP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 4.5V @ 50µA for MOSFET threshold level.
