STW45NM60

STW45NM60
Attribute
Description
Manufacturer Part Number
STW45NM60
Manufacturer
Description
MOSFET N-CH 650V 45A TO247-3
Note : GST will not be applied to orders shipping outside of India

Stock:
1200

Distributor: 122

Lead Time: Not specified

Quantity Unit Price Ext. Price
600 ₹ 621.40 ₹ 3,72,840.00

Stock:
1200

Distributor: 111

Lead Time: Not specified


Quantity Unit Price Ext. Price
600 ₹ 621.40 ₹ 3,72,840.00

Stock:
591

Distributor: 117

Lead Time: Not specified


Quantity Unit Price Ext. Price
510 ₹ 636.05 ₹ 3,24,385.50
120 ₹ 652.72 ₹ 78,326.40
30 ₹ 759.53 ₹ 22,785.90
1 ₹ 1,246.89 ₹ 1,246.89

Stock:
26

Distributor: 58

Lead Time: Not specified


Quantity Unit Price Ext. Price
25 ₹ 855.54 ₹ 21,388.50
19 ₹ 868.15 ₹ 16,494.85
14 ₹ 882.49 ₹ 12,354.86
7 ₹ 895.10 ₹ 6,265.70
1 ₹ 914.60 ₹ 914.60

Stock:
586

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 950.52 ₹ 950.52
10 ₹ 657.71 ₹ 6,577.10
100 ₹ 623.89 ₹ 62,389.00

Stock:
586

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 970.10 ₹ 970.10
10 ₹ 671.06 ₹ 6,710.60
100 ₹ 636.35 ₹ 63,635.00
600 ₹ 635.46 ₹ 3,81,276.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line MDmesh™
IC Encapsulation Type Tube
Availability Status Active
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 650 V
Continuous Drain Current at 25C 45A (Tc)
Gate Drive Voltage Range 10V
Max On-State Resistance 110mOhm @ 22.5A, 10V
Max Threshold Gate Voltage 5V @ 250µA
Max Gate Charge at Vgs 134 nC @ 10 V
Maximum Gate Voltage ±30V
Max Input Cap at Vds 3800 pF @ 25 V
Transistor Special Function -
Max Heat Dissipation 417W (Tc)
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Vendor Package Type TO-247-3
Component Housing Style TO-247-3

Description

Supports a continuous drain current (Id) of 45A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 134 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 134 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 3800 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 3800 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Enclosure type TO-247-3 ensuring device integrity. Highest power dissipation 417W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 134 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 110mOhm @ 22.5A, 10V for MOSFET criteria. Product or component classification series MDmesh™. Manufacturer package type TO-247-3 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.

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