Stock: 605
Distributor: 122
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 600 | ₹ 770.38 | ₹ 4,62,228.00 |
Stock: 600
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 600 | ₹ 770.38 | ₹ 4,62,228.00 |
Stock: 574
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 120 | ₹ 778.75 | ₹ 93,450.00 |
| 30 | ₹ 900.56 | ₹ 27,016.80 |
| 1 | ₹ 1,458.71 | ₹ 1,458.71 |
Stock: 250
Distributor: 127
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 250 | ₹ 811.68 | ₹ 2,02,920.00 |
| 100 | ₹ 824.14 | ₹ 82,414.00 |
| 25 | ₹ 833.04 | ₹ 20,826.00 |
| 5 | ₹ 842.83 | ₹ 4,214.15 |
| 1 | ₹ 852.62 | ₹ 852.62 |
Stock: 1963
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,098.26 | ₹ 1,098.26 |
| 10 | ₹ 838.38 | ₹ 8,383.80 |
| 100 | ₹ 774.30 | ₹ 77,430.00 |
Stock: 1959
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,120.51 | ₹ 1,120.51 |
| 10 | ₹ 855.29 | ₹ 8,552.90 |
| 100 | ₹ 790.32 | ₹ 79,032.00 |
| 600 | ₹ 789.43 | ₹ 4,73,658.00 |
Stock: 1502
Distributor: 130
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,268.22 | ₹ 1,268.22 |
| 10 | ₹ 1,206.94 | ₹ 12,069.40 |
| 25 | ₹ 1,190.99 | ₹ 29,774.75 |
| 100 | ₹ 1,175.67 | ₹ 1,17,567.00 |
Stock: 6
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 6 | ₹ 1,284.27 | ₹ 7,705.62 |
| 3 | ₹ 1,348.48 | ₹ 4,045.44 |
| 1 | ₹ 1,444.81 | ₹ 1,444.81 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | MDmesh™ V | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 650 V | |
| Continuous Drain Current at 25C | 84A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 29mOhm @ 42A, 10V | |
| Max Threshold Gate Voltage | 5V @ 250µA | |
| Max Gate Charge at Vgs | 204 nC @ 10 V | |
| Maximum Gate Voltage | ±25V | |
| Max Input Cap at Vds | 8825 pF @ 100 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 450W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-247-3 | |
| Component Housing Style | TO-247-3 |
Description
Supports a continuous drain current (Id) of 84A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 204 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 204 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 8825 pF @ 100 V at Vds for safeguarding the device. The input capacitance is rated at 8825 pF @ 100 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Enclosure type TO-247-3 ensuring device integrity. Highest power dissipation 450W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 204 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 29mOhm @ 42A, 10V for MOSFET criteria. Product or component classification series MDmesh™ V. Manufacturer package type TO-247-3 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±25V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.
