2SK1828TE85LF
Data Sheet
Attribute
Description
Manufacturer Part Number
2SK1828TE85LF
Manufacturer
Description
MOSFET N-CH 20V 50MA S-MINI
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 50mA | |
| Max On-State Resistance | 40 Ohm @ 10mA, 2.5V | |
| Max Threshold Gate Voltage | 1.5V @ 100µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 5.5pF @ 3V | |
| Maximum Power Handling | 200mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 50mA at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 5.5pF @ 3V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 200mW for device protection. Peak Rds(on) at Id and Vgs 40 Ohm @ 10mA, 2.5V for MOSFET criteria. Peak Vgs(th) at Id 1.5V @ 100µA for MOSFET threshold level.
