SSM3J14TTE85LF
Data Sheet
Attribute
Description
Manufacturer Part Number
SSM3J14TTE85LF
Manufacturer
Description
MOSF P CH 30V 2.7A TSM
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 2.7A (Ta) | |
| Max On-State Resistance | 85 mOhm @ 1.35A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 413pF @ 15V | |
| Maximum Power Handling | 1.25W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 2.7A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. The input capacitance is rated at 413pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 1.25W for device protection. Peak Rds(on) at Id and Vgs 85 mOhm @ 1.35A, 10V for MOSFET criteria.
