SSM3J56MFV,L3F
Data Sheet
Attribute
Description
Manufacturer Part Number
SSM3J56MFV,L3F
Manufacturer
Description
MOSF P CH 20V 800MA VESM
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 800mA (Ta) | |
| Max On-State Resistance | 390 mOhm @ 800mA, 4.5V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 100pF @ 10V | |
| Maximum Power Handling | 150mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-723 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 800mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. The input capacitance is rated at 100pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-723 providing mechanical and thermal shielding. Peak power 150mW for device protection. Peak Rds(on) at Id and Vgs 390 mOhm @ 800mA, 4.5V for MOSFET criteria.
