SSM3K301T(TE85L,F)
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 3.5A | |
| Max On-State Resistance | 56 mOhm @ 2A, 4V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 4.8nC @ 4V | |
| Input Cap at Vds | 320pF @ 10V | |
| Maximum Power Handling | 700mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 3.5A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 4.8nC @ 4V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 320pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 700mW for device protection. Peak Rds(on) at Id 4.8nC @ 4V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 56 mOhm @ 2A, 4V for MOSFET criteria.
