SSM3K310T(TE85L,F)

SSM3K310T(TE85L,F)

Data Sheet

Attribute
Description
Manufacturer Part Number
SSM3K310T(TE85L,F)
Manufacturer
Description
No description available
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 5A (Ta)
Max On-State Resistance 28 mOhm @ 4A, 4V
Max Threshold Gate Voltage -
Gate Charge at Vgs 14.8nC @ 4V
Input Cap at Vds 1120pF @ 10V
Maximum Power Handling -
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 5A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 14.8nC @ 4V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1120pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak Rds(on) at Id 14.8nC @ 4V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 28 mOhm @ 4A, 4V for MOSFET criteria.

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