SSM6N16FUTE85LF
Data Sheet
Attribute
Description
Manufacturer Part Number
SSM6N16FUTE85LF
Manufacturer
Description
MOSF N CH 20V 100MA US6
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 100mA (Ta) | |
| Max On-State Resistance | 3 Ohm @ 10mA, 4V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 9.3pF @ 3V | |
| Maximum Power Handling | 200mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-TSSOP, SC-88, SOT-363 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 9.3pF @ 3V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 6-TSSOP, SC-88, SOT-363 providing mechanical and thermal shielding. Peak power 200mW for device protection. Peak Rds(on) at Id and Vgs 3 Ohm @ 10mA, 4V for MOSFET criteria.
