TK7Q60W,S1VQ
Data Sheet
Attribute
Description
Manufacturer Part Number
TK7Q60W,S1VQ
Manufacturer
Description
MOSFET N-CH 600V 7A IPAK-3
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 600V | |
| Continuous Drain Current at 25C | 7A (Ta) | |
| Max On-State Resistance | 600 mOhm @ 3.5A, 10V | |
| Max Threshold Gate Voltage | 3.7V @ 350µA | |
| Gate Charge at Vgs | 15nC @ 10V | |
| Input Cap at Vds | 490pF @ 300V | |
| Maximum Power Handling | 60W | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 7A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 600V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 15nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 490pF @ 300V at Vds for optimal performance. Peak power 60W for device protection. Peak Rds(on) at Id 15nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 600 mOhm @ 3.5A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.7V @ 350µA for MOSFET threshold level.
