TPC8208(TE12L,Q)
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 5A | |
| Max On-State Resistance | 50 mOhm @ 2.5A, 4V | |
| Max Threshold Gate Voltage | 1.2V @ 200µA | |
| Gate Charge at Vgs | 9.5nC @ 5V | |
| Input Cap at Vds | 780pF @ 10V | |
| Maximum Power Handling | 750mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.173", 4.40mm Width) |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 5A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as 2 N-Channel (Dual). Upholds 9.5nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 780pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-SOIC (0.173", 4.40mm Width) providing mechanical and thermal shielding. Peak power 750mW for device protection. Peak Rds(on) at Id 9.5nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 50 mOhm @ 2.5A, 4V for MOSFET criteria. Peak Vgs(th) at Id 1.2V @ 200µA for MOSFET threshold level.
