2N6660

2N6660
Attribute
Description
Manufacturer Part Number
2N6660
Manufacturer
Description
MOSFET N-CH 60V 990MA TO205AD
Note : GST will not be applied to orders shipping outside of India

Stock:
15

Distributor: 157

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 802.78 ₹ 802.78

Stock:
9

Distributor: 125

Lead Time: Not specified


Quantity Unit Price Ext. Price
1000 ₹ 1,780.00 ₹ 17,80,000.00
100 ₹ 2,054.12 ₹ 2,05,412.00
1 ₹ 2,738.53 ₹ 2,738.53

Stock:
3

Distributor: 118

Lead Time: Not specified


Quantity Unit Price Ext. Price
2 ₹ 1,865.26 ₹ 3,730.52
1 ₹ 1,998.49 ₹ 1,998.49

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Obsolete
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 60 V
Continuous Drain Current at 25C 990mA (Tc)
Gate Drive Voltage Range 5V, 10V
Max On-State Resistance 3Ohm @ 1A, 10V
Max Threshold Gate Voltage 2V @ 1mA
Max Gate Charge at Vgs -
Maximum Gate Voltage ±20V
Max Input Cap at Vds 50 pF @ 25 V
Transistor Special Function -
Max Heat Dissipation 725mW (Ta), 6.25W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Vendor Package Type TO-205AD (TO-39)
Component Housing Style TO-205AD, TO-39-3 Metal Can

Description

Supports a continuous drain current (Id) of 990mA (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. The highest input capacitance is 50 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 50 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-205AD, TO-39-3 Metal Can providing mechanical and thermal shielding. Enclosure type TO-205AD (TO-39) ensuring device integrity. Highest power dissipation 725mW (Ta), 6.25W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id and Vgs 3Ohm @ 1A, 10V for MOSFET criteria. Manufacturer package type TO-205AD (TO-39) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2V @ 1mA for MOSFET threshold level.

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