Stock: 2500
Distributor: 113
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2500 | ₹ 96.56 | ₹ 2,41,400.00 |
| 300 | ₹ 94.70 | ₹ 28,410.00 |
| 1000 | ₹ 92.20 | ₹ 92,200.00 |
| 2000 | ₹ 90.96 | ₹ 1,81,920.00 |
| 4000 | ₹ 88.47 | ₹ 3,53,880.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 1.7A (Ta) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 200mOhm @ 1A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 11 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 310 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 1.3W (Ta) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | 4-HVMDIP | |
| Component Housing Style | 4-DIP (0.300", 7.62mm) |
Description
Supports a continuous drain current (Id) of 1.7A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 11 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 11 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 310 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 310 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case 4-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Enclosure type 4-HVMDIP ensuring device integrity. Highest power dissipation 1.3W (Ta) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 11 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 200mOhm @ 1A, 10V for MOSFET criteria. Manufacturer package type 4-HVMDIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
